Morphology and Charge Transport Properties of P(NDI2OD-T2)/Polystyrene Blends

While the strategy of blending commodity insulating polymers with conjugated has been previously applied to modify properties organic field-effect transistors (OFETs), comprehensive studies on evolution morphology and OFET performance film composition are scarce. In this contribution, films comprising n-type semiconducting polymer P(NDI2OD-T2) polystyrene (PS) explored in detail. particular, electrical blends a concentration ranging from 0.125 100 wt % studied. Two regimes characterized by distinct dependencies device mobility as function content observed: Above 12.5 P(NDI2OD-T2), exhibits weak dependence despite presence strong lateral phase separation, while below 12.5%, is observed decrease strongly decreasing attributed disrupted surface connectivity phase. UV–vis absorption spectroscopy grazing incidence wide-angle X-ray scattering (GIWAXS) measurements indicate that aggregation crystalline packing not affected PS. Atomic force microscopy scanning transmission spectro-microscopy reveal separation for compositions 87.5 25 P(NDI2OD-T2). Enrichment at confirmed near-edge fine structure spectroscopy, high (>80 %) maintained down an overall blend The less than loss low loading. We also observe transition face-on edge-on dominated configuration GIWAXS, consistent layer persists monolayer coverage.